CS1007 Semiconductor Devices and Circuits
(Common for ECE, EEE, EIE, EContE, BME, CSE & CSIT)

Unit I

Electronic Dynamics and CRO

Motion of charged particles in electric and magnetic fields. Simple problems involving like Electric and Magnetic field only. Electrostatic and magnetic focusing. Principles of CRT, Deflection sensitivity (Electrostatic and magnetic deflection) Applications of CRO: Voltage current and frequency measurements.

Unit II

Semiconductor Diodes and Rectifiers

Construction principle of operation, V-I Characteristics, symbol, equivalent circuit, parameter calculation, applications, limitations and specifications of pn junction diode, zener diode, varactor diode, Tunnel diode, and photo diode. Diffusion and transition capacitance of pn junction diode.

Unit III

Transistor Characteristics

Construction, principles of operation, VI characteristics, symbol, equivalent circuit, parameter calculations, applications, limitations and specifications of BJT, FET and MOSFET’s (Different configuration of transistors are to be considered). Specifications of BJT, FET, UJT and MOSFET’s.

Unit-IV

Amplifiers:

Biasing, DC equivalent model, criteria for fixing operating point and methods of bias stabilization, thermal runaway and thermal stability. Small signal low frequency transistor amplifier circuits – parameter representation of a transistor, Analysis of single state transistor amplifier using parameters: Voltage gain, current gain, input impedence and output impedance comparison of BJT and FET RC-coupled amplifier – frequency, cascaded amplifier (all configurations of BJT and FET are to be considered). High frequency model of transistor, O, and cut-off frequencies of transistor. Single stage and multistage amplifiers. Allocation of bandwidth of single and multistage amplifiers. Concepts of gain bandwidth product. Specifications of amplifiers.

Unit-V

Freedback amplifiers and oscillators:

Concepts of feedback. Classification of feedback amplifiers, general characteristics of negative feedback amplifiers, effect of feedback on amplifier characteristics, single problems.

Condition for oscillations, RC and LC type oscillators, crystal oscillators, frequency and amplitude stability of oscillations. Generalized analysis of IC oscillators, quarze (Hartely, Colpitts) RC phase-shift and Wein-bridge oscillators.

Unit-VI

Power amplifiers and turned amplifiers:

Classification of power amplifiers, Class A,B, AB and C power amplifiers, push-pull and complementary push-pull amplifiers. Design of heat sinks, power output, efficiency, cross-over distortion and harmonic distortion. Specifications of power amplifiers, Single turned and double turned voltage amplifiers. Interstage design, stability considerations, class B and class C turned power amplifiers and specifications.

References:

1. Nash Elsky and Boy Sted, Electronic Devices and Circuits, PHL

2. Millman and Halkias, Electronic Devices and Circuits, ISE

3. YN BAPAT, Electronic Devices and Circuits – Discrete and integrated, MH

4. Millman and Grabel, Microelectronics, McH

5. Bogart: Electronic Devices and Circuits (Universal Book Stall, New Delhi)